Download 3D IC Stacking Technology by Banqiu Wu, Ajay Kumar, Sesh Ramaswami PDF

By Banqiu Wu, Ajay Kumar, Sesh Ramaswami

The most up-to-date advances in third-dimensional built-in circuit stacking technology

With a spotlight on business functions, 3D IC Stacking Technology bargains finished assurance of layout, try, and fabrication processing tools for third-dimensional machine integration. each one bankruptcy during this authoritative advisor is written by way of specialists and information a separate fabrication step. destiny functions and state of the art layout strength also are mentioned. this is often an important source for semiconductor engineers and conveyable gadget designers.

3D IC Stacking Technology covers:

  • High density via silicon stacking (TSS) technology
  • Practical layout environment for heterogeneous 3D IC products
  • Design automation and TCAD device options for via silicon through (TSV)-based 3D IC stack
  • Process integration for TSV manufacturing
  • High-aspect-ratio silicon etch for TSV
  • Dielectric deposition for TSV
  • Barrier and seed deposition
  • Copper...
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    Extra resources for 3D IC Stacking Technology

    Example text

    One alternative with passive interposers is to embed passive devices, such as inductors, resistors, and capacitors that might be used for the analog, RF, and power-distribution circuits of the chip. 3D SiP Types: Stacked ICs & Packages Non-TSV • Bare die stacking • wirebond, flipchip • embedded die substrate • Package stacking • PoP • PiP TSV • With transistors • via-first: TSVs fabricated before transistors • via-middle: TSVs fabricated after transistors & before BEOL • via-last: TSVs fabricated after BEOL.

    The optimum flow choice for TSS fabrication and assembly will be determined by cost, yield, test strategy, and reliability considerations for specific applications. As TSS moves to stacking of more than two dies, a combination of these flows might be considered for the different tiers in the stack to attain optimum results. 14 Die-to-substrate or die-to-die flow. The choice of fabrication and assembly flow must also consider handoff points between the suppliers in the manufacturing chain. For via-middle TSS, the foundry will be responsible for formation of the TSV, since contamination control prohibits wafers from being removed from the wafer fab, processed externally, and then returned to the fab.

    Impact on test and package cost must also be considered. Ultimately, when all the TSS technical challenges have been resolved, manufacturing cost will be the primary challenge for widespread adoption of TSS. Process equipment depreciation and materials represent the majority of cost adders. Incremental steps include for via etch, via liner/barrier/seed deposition, via copper fill, copper overburden chemical-mechanical polishing (CMP), temporary carrier bond and debond, wafer thinning, backside dielectric and interconnect formation, and micro-bump formation, joining, and underfill.

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