By Cheol Seong Hwang
This edited quantity discusses atomic layer deposition (ALD) for all smooth semiconductor units, relocating from the fundamental chemistry of ALD and modeling of ALD strategies to sections on ALD for stories, good judgment units, and machines. The part on ALD for thoughts covers either heavily produced thoughts, comparable to DRAM and Flash, and rising stories, resembling PCRAM and FeRAM. The part on ALD for common sense units covers either front-end of the road methods and back-end of the road approaches. the ultimate part on ALD for machines appears at toolsets and platforms undefined. every one bankruptcy presents the heritage, working rules, and an entire clarification of ALD procedures for every device.
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Extra resources for Atomic Layer Deposition for Semiconductors
Nat Mater 2:749 52. Li Z, Gordon RG, Pallem V, Li H, Shenai DV (2010) Direct-liquid-injection chemical vapor deposition of nickel nitride films and their reduction to nickel films. Chem Mater 22:3060 53. Li Z, Gordon RG, Li H, Shenai DV, Lavoie C (2010) Formation of nickel silicide from direct-liquid-injection chemical-vapor-deposited nickel nitride films. J Electrochem Soc 157:H679 54. Li Z, Rahtu A, Gordon RG (2006) Atomic layer deposition of ultrathin copper metal films from a liquid copper(I) amidinate precursor.
20 Elements with amidinate ALD precursors CH 3 H H H3 C C H3 C N N CH3 CH 3 C H2 C N M N CH 2 N M H3 C N,N’-diethylformamidinate (Et2fmd) CH3 C CH N M N,N’-dimethylformamidinate (Me2fmd) H H3 C CH3 CH2 CH N CH3 N,N’-diisopropylformamidinate (iPr2 fmd) N H3 C CH M H 3C CH3 C C CH CH3 CH 3 CH 3 H 2C C N N C CH3 M CH 3 CH3 CH3 N,N’- di-tert-butylacetamidinate (t Bu2amd) N,N’-di-sec-butylacetamidinate (sBu2amd) Increasing steric bulk CH3 H3 C CH2 C C N H2 N H2 C H3 C CH3 C M CH3 H3C CH3 C C N H2 CH3 N-tert-butylN’-ethylacetamidinate (t BuEt-amd) H3C H3C N C M CH3 N-tert-butylN’-ethylpropionamidinate (t BuEt-pmd) CH3 C H2 CH3 CH2 H3C C C N H2 H2 C H3C CH2 N C CH3 M CH3 N-tert-butylN’-ethylbutyramidinate (t BuEt-bmd) CH3 C C N H2 N C CH3 M CH3 N-tert-butylN’-ethylpentylamidinate (t BuEt-pemd) Increasing flexibility leads to decreasing melting points and liquids Fig.
Thin Solid Films 517:201 38. Kukli BK et al (2006) Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films. Chem Vap Deposition 12:158 39. Nieminen M (2001) Formation and stability of lanthanum oxide thin films deposited from bdiketonate precursor. Appl Surf Sci 174:155 40. Kwon OS, Kim SK, Cho M, Hwang CS, Jeong J (2005) Chemically conformal ALD of SrTiO3 thin films using conventional metallorganic precursors. J Electrochem Soc 152:C229 41. Biercuk MJ, Monsma DJ, Marcus CM, Becker JS, Gordon RG (2003) Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications.