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By Sergei Baranovski

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27), it depends exponentially on p 2g0 = e F / ¯e ; for large e F and at a fixed L, exp[L / a (g, g0)] is no longer large compared with unity so that the asymptotic behavior at large L is not reached. 27), we may write it in the form ε c ε = ln [ L l (ε c )] − ϕ [ g1 (e − 1) , ε c π 2 ε ]. 28) As the Fermi level crosses e c, we pass from the region where the exponential asymptotic behavior of the conductance is reached and the conductance is very small to the region where this asymptotic behavior is not reached.

For the two-dimensional case, we (2D) −2 (3D) have UC Ӎ eB/r (2D) s , e F = e B (r s ) , and UC /e F Ӎ r s . , at low electron concentrations, in particular, near the metal–insulator transition. 5 for a two-dimensional electron gas [42]). Since the experiments clearly indicate the presence of weak-localization corrections, electron–electron interaction effects cannot be generally disregarded, in particular, in the energy region near the mobility edge. Nevertheless, the concept of noninteracting charge carries has appeared to be very fruitful for understanding the main features of extendedstate conduction, including the vicinity of the metal–insulator transition.

3 3 2π 2 , [8]) and the constants F a0 are the Fermi-liquid interaction parameters (in the triplet channel) that depend on the screening radius. Thus the interaction term has a T 1/2 dependence, but its sign depends on the relative size of the exchange and Hartree terms, which is a function of the screening length. In doped multi-valley semiconductors, such effects as the presence of several conduction band minima, scattering, and mass anisotropy must be considered if a detailed quantitative comparison is desired.

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