Download CVD Diamond by Satoshi Koizumi, Christoph Nebel, Milos Nesladek PDF

By Satoshi Koizumi, Christoph Nebel, Milos Nesladek

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In ref. [8] relates a critical magnetic field Bk for the transition to delocalized conduction, induced by the magnetic field perturbation. 8 The magnetoresistance data (a) measured at low helium temperatures for 20% N-doped UNCD films, prepared at Argonne Laboratories. USA. 1, discussed in the text (starting at the Bk critical magnetic field onset); (b) magnetorestistance data for a B-doped NCD sample with B-concentration of 5 × 1019 cm−3 showing a positive magnetoresistance based on the shrinkage of the wave function with applied magnetic field.

Fundamental experiments on diamond growth along with theoretical aspects are important to elucidate diamond growth mechanisms. 3 Total Gas Pressure The total gas pressure PT mainly influences the plasma gas temperature and the plasma volume. Under typical MPCVD conditions, the electrons in the plasma are accelerated using a high-frequency electric field; thereby, the total energy of the electron gas system increases. On the other hand, plasma ions cannot follow the microwave frequency because of their heavy mass.

2 Effects of Process Parameters on Homoepitaxial Diamond Film Quality This section presents a description of how each parameter of the growth conditions of MPCVD affects the diamond growth mode, based on the reported results from homoepitaxial diamond. Although some fundamental process parameters of growth condition are discussed below, it is noteworthy that these parameters are mutually related. For example, when the total gas pressure is changed, the substrate temperature is modified as well because the plasma radiation density at the substrate changes.

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