By Satoshi Koizumi, Christoph Nebel, Milos Nesladek
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Additional info for CVD Diamond
In ref.  relates a critical magnetic ﬁeld Bk for the transition to delocalized conduction, induced by the magnetic ﬁeld perturbation. 8 The magnetoresistance data (a) measured at low helium temperatures for 20% N-doped UNCD ﬁlms, prepared at Argonne Laboratories. USA. 1, discussed in the text (starting at the Bk critical magnetic ﬁeld onset); (b) magnetorestistance data for a B-doped NCD sample with B-concentration of 5 × 1019 cm−3 showing a positive magnetoresistance based on the shrinkage of the wave function with applied magnetic ﬁeld.
Fundamental experiments on diamond growth along with theoretical aspects are important to elucidate diamond growth mechanisms. 3 Total Gas Pressure The total gas pressure PT mainly inﬂuences the plasma gas temperature and the plasma volume. Under typical MPCVD conditions, the electrons in the plasma are accelerated using a high-frequency electric ﬁeld; thereby, the total energy of the electron gas system increases. On the other hand, plasma ions cannot follow the microwave frequency because of their heavy mass.
2 Effects of Process Parameters on Homoepitaxial Diamond Film Quality This section presents a description of how each parameter of the growth conditions of MPCVD affects the diamond growth mode, based on the reported results from homoepitaxial diamond. Although some fundamental process parameters of growth condition are discussed below, it is noteworthy that these parameters are mutually related. For example, when the total gas pressure is changed, the substrate temperature is modiﬁed as well because the plasma radiation density at the substrate changes.