Download Defects in microelectronic materials and devices by Daniel M. Fleetwood, Ronald D. Schrimpf PDF

By Daniel M. Fleetwood, Ronald D. Schrimpf

Uncover the Defects that Compromise functionality and Reliability
As microelectronics positive aspects and units develop into smaller and extra complicated, it's serious that engineers and technologists thoroughly know the way elements could be broken throughout the more and more complex fabrication methods required to provide them.

A accomplished survey of defects that happen in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) applied sciences, this booklet additionally discusses flaws in linear bipolar applied sciences, silicon carbide-based units, and gallium arsenide fabrics and units. those defects can profoundly impact the yield, functionality, long term reliability, and radiation reaction of microelectronic units and built-in circuits (ICs). Organizing the fabric to construct knowing of the issues and supply a short reference for scientists, engineers and technologists, this article studies yield- and performance-limiting defects and impurities within the equipment silicon layer, within the gate insulator, and/or on the serious Si/SiO2 interface. It then examines defects that impression construction yield and long term reliability, including:

  • Vacancies, interstitials, and impurities (especially hydrogen)
  • Negative bias temperature instabilities
  • Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive procedure
The authors condense a long time of expertise and views of famous experimentalists and theorists to symbolize disorder houses and their effect on microelectronic units. They establish the defects, supplying options to prevent them and techniques to become aware of them. those comprise using three-D imaging, in addition to electric, analytical, computational, spectroscopic, and state of the art microscopic tools. This publication is a priceless examine demanding situations to come back from rising fabrics, comparable to high-K gate dielectrics and high-mobility substrates being built to switch Si02 because the most well liked gate dielectric fabric, and high-mobility substrates.

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Kinetics of the end-of-range damage dissolution in flash-assist rapid thermal processing, Appl. Phys. , 88, 232104, 2006. 62. , Phosphorus-defect interactions during thermal annealing of ion implanted silicon, PhD dissertation, University of Florida, Gainesville, FL, 2001. 63. , Growth of precursors in silicon using pseudopotential calculations, Phys. Rev. , 88, 085501, 2002. 64. H. , Diffusion and interactions of point defects in silicon: Molecular dynamics simulations, Nucl. Instrum. Meth. B, 102, 247, 1995.

Phys. , 71, 659, 1997. 32. A. , Defects in electron-irradiated germanium, Phil. Mag. A, 34, 1057, 1976. 33. G. , {113} Loops in electron-irradiated silicon, Phil. Mag. A, 39, 317, 1979. 34. S. , A systematic analysis of defects in ion implanted silicon, Appl. Phys. A, 45, 1, 1988. 35. -H. , {311} defects in silicon: The source of the loops, Appl. Phys. , 73, 3748, 1998. 36. E. , A new model for {311} defects based on in-situ measurements, International Electron Device Meeting, San Francisco, CA, 2000, p.

This time exceeds the size of the radiation pulse produced by the ß 2008 by Taylor & Francis Group, LLC. flash lamps by an order of magnitude. Hence the presence of {311}-type defect in the microstructure after the 12008C fRTP is plausible, since the time of the flash anneal was insufficient to affect dissolution based on the equivalent anneal time calculation. A similar argument holds for the occurrence of dislocation loops upon annealing at 13008C. 3 ms is required to account for the differences in the interstitial densities between 12008C and 13008C flash anneals, which falls within the range of the FWHM of the flash pulse at 13008C, confirming that the anneal time is sufficient to affect {311}-type defect dissolution, and explaining the presence of only dislocation loops in the microstructure.

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