By E. F. Schubert
Doping of III-V semiconductor compounds is the foundation of just about all semiconductor heterostructures and all optoelectronic units. this is often the 1st booklet to supply a accomplished and thorough therapy of the topic, analyzing either theoretical and experimental features, and together with vital fabric on delta-doping. the writer is inquisitive about study at one of many world's finest microelectronics laboratories, and whereas assessing the present cutting-edge, he additionally offers useful introductory fabric for these starting reports or study during this box.
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Extra info for Doping in III-V Semiconductors
The energy given by Eq. 69) represents the shift with respect to the absorption edge in an undoped two-dimensional semiconductor. The Burstein-Moss shift is illustrated in Fig. , 1975). 7 x 10 18 cm" 3 . As the carrier concentration exceeds 6 x 10 17 cm" 3 , the Burstein-Moss shift due to the filling of the conduction band begins to have a significant effect. This shift of the absorption coefficient to higher energies is readily shown in Fig. 7 x 10 18 cm" 3 . 6 eV to within ±10% of the a of the high-purity sample.
Variations in the band-edge potential can occur due to local doping concentration changes or local compositional changes of a semiconductor. An example of a potential fluctuation is shown in Fig. 10. At some location, an excess positive donor charge causes a dip in the band-edge potential. The potential dip attracts electrons and results in a locally higher concentration of electrons at the potential dip. e. free carriers screen the potential fluctuation. This is 28 Shallow impurities F \ y /N /V///J f////l/7 J Er, Fig.
For simplicity, the factor y is frequently assumed to be unity. Austin and Mott (1969) showed for gaussian localization, in which transport occurs via tunneling to remote but energetically similar donors, that the value of y = V*. Efros and Shklovskii (1975) showed that y = Vi, if Coulomb interaction between adjacent donors determines the hopping transport between adjacent donors. In this case the thermal activation energy for the hopping process is given by 42 Shallow impurities (a) (b) (c) Fig.