By A. A. Gippius (auth.), D. V. Skobel’tsyn (eds.)
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Additional info for Electrical and Optical Properties of Semiconductors
Below 1 K, the ideal law to be used is the Curie-Weiss law 0 III c X = -=-;c-T-6 /I where C = const, e is the Curie temperature, and X is the magnetic susceptibility. 04°K). We actually used bulk and film thermometers made of various types of carbon and Aquadag and we calibrated them by means of gas and magnetic thermometers. f The characteristic of one of the thermometers used is shown in Fig. 3. Each thermometer had a range of temperatures in which its sensitivity was highest. This was the range in which that thermometer was used.
The author is also very gratefUl to B. M. Vul for his interest in this research and for discussing the results obtained; to L. S. Smirnov and A. V. Spitsyn for their help and valuable discussions; and to M. S. Murashov and V. S. Konoplev, with whose help some of the results reported were obtained. The author is also much indebted to L. S. Silonov, B. D. Kopylovskii, and N. V. Zhigalov for the construction, assembly, and adjustment of the radiofrequency apparatus; to V. D. Kopanev, S. 1. Vintovkin, and Yu.
10-4 where E is the energy lost by the incident electrons in the thickness of the sample; j is the density of the current of the fast incident electrons; e is the average ionization energy; and d is the thickness of the sample. 5 mm thick. The average ionization energy was assumed to be 3 eV . lA- V ~no 1 c' (16) where V8 is the 8 -conductivity signal; no is the equilibrium density of carriers in the sample. p, since the concentration of recombination centers was low. 5 mm dimensions. Table 2 lists the results of measurements for three samples.