Download Fundamentals of Silicon Carbide Technology: Growth, by Tsunenobu Kimoto, James A. Cooper PDF

By Tsunenobu Kimoto, James A. Cooper

A complete creation and updated connection with SiC strength semiconductor units overlaying subject matters from fabric homes to applications

Based on a few breakthroughs in SiC fabric technological know-how and fabrication expertise within the Nineteen Eighties and Nineties, the 1st SiC Schottky barrier diodes (SBDs) have been published as advertisement items in 2001.  The SiC SBD marketplace has grown considerably considering that that point, and SBDs at the moment are utilized in various energy platforms, relatively switch-mode strength offers and motor controls.  SiC strength MOSFETs entered advertisement creation in 2011, delivering rugged, high-efficiency switches for high-frequency strength systems.  during this wide-ranging publication, the authors draw on their substantial adventure to give either an advent to SiC fabrics, units, and functions and an in-depth reference for scientists and engineers operating during this fast-moving field.  basics of Silicon Carbide Technology covers simple houses of SiC fabrics, processing know-how, concept and research of useful units, and an summary of an important structures purposes.  Specifically integrated are:

  • A whole dialogue of SiC fabric houses, bulk crystal progress, epitaxial development, equipment fabrication know-how, and characterization techniques.
  • Device physics and working equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
  • A survey of strength electronics purposes, together with switch-mode strength provides, motor drives, energy converters for electrical cars, and converters for renewable strength sources.
  • Coverage of particular purposes, together with microwave units, high-temperature electronics, and rugged sensors.
  • Fully illustrated all through, the textual content is written by means of famous specialists with over forty five years of mixed event in SiC study and development.

This publication is meant for graduate scholars and researchers in crystal development, fabric technology, and semiconductor machine expertise. The ebook can also be worthy for layout engineers, program engineers, and product managers in parts resembling strength offers, converter and inverter layout, electrical car expertise, high-temperature electronics, sensors, and clever grid technology.

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Additional info for Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

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Jpn. J. Appl. , 45, 7565. [114] Friedrichs, P. (2008) Silicon carbide power-device products–Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications. Phys. Status Solidi B, 245, 1232. , Kawamoto, N. et al. (2009) Development of SiC diodes, power MOSFETs and intelligent power modules. Phys. Status Solidi A, 206, 2403. [116] Kimoto, T. (2010) Technical Digest 2010 VLSI Technology Symposium, Honolulu, Hawaii, 2010, p. 9 SiC technologies for future energy electronics.

A crystal plane (h1 h2 h3 lh ) is equivalent to a plane (h k l), defined by three Miller indices in a monoclinic system, when the following relations are satisfied: h1 = h, h2 = k, h3 = –(h + k), and lh = l. 5) In a similar manner, a crystalline direction [u1 u2 u3 ????h ] is equivalent to a direction [u ???? ????], defined by three Miller indices in a monoclinic system, when the following relations are satisfied: u1 = (2u–????)∕3, u2 = (2????–u)∕3, u3 = –(u + ????)∕3, ????h = ????. 8). In this sense, Si atoms can be referred to as cations and C atoms as anions.

18 shows (a) the low-field electron mobility versus donor density and (b) the hole mobility versus acceptor density for 4H-SiC at different temperatures [69–72]. At high temperature, the doping dependence of mobility becomes small, because the influence of impurity scattering decreases. 17 (a) Low-field electron mobility versus donor density and (b) hole mobility versus acceptor density for 4H-SiC and 6H-SiC at room temperature. 18 (a) Low-field electron mobility versus donor density and (b) hole mobility versus acceptor density for 4H-SiC at different temperatures ([69–72] reproduced with permission from AIP Publishing LLC).

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