By Tsunenobu Kimoto, James A. Cooper
A complete creation and updated connection with SiC strength semiconductor units overlaying subject matters from fabric homes to applications
Based on a few breakthroughs in SiC fabric technological know-how and fabrication expertise within the Nineteen Eighties and Nineties, the 1st SiC Schottky barrier diodes (SBDs) have been published as advertisement items in 2001. The SiC SBD marketplace has grown considerably considering that that point, and SBDs at the moment are utilized in various energy platforms, relatively switch-mode strength offers and motor controls. SiC strength MOSFETs entered advertisement creation in 2011, delivering rugged, high-efficiency switches for high-frequency strength systems. during this wide-ranging publication, the authors draw on their substantial adventure to give either an advent to SiC fabrics, units, and functions and an in-depth reference for scientists and engineers operating during this fast-moving field. basics of Silicon Carbide Technology covers simple houses of SiC fabrics, processing know-how, concept and research of useful units, and an summary of an important structures purposes. Specifically integrated are:
- A whole dialogue of SiC fabric houses, bulk crystal progress, epitaxial development, equipment fabrication know-how, and characterization techniques.
- Device physics and working equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
- A survey of strength electronics purposes, together with switch-mode strength provides, motor drives, energy converters for electrical cars, and converters for renewable strength sources.
- Coverage of particular purposes, together with microwave units, high-temperature electronics, and rugged sensors.
- Fully illustrated all through, the textual content is written by means of famous specialists with over forty five years of mixed event in SiC study and development.
This publication is meant for graduate scholars and researchers in crystal development, fabric technology, and semiconductor machine expertise. The ebook can also be worthy for layout engineers, program engineers, and product managers in parts resembling strength offers, converter and inverter layout, electrical car expertise, high-temperature electronics, sensors, and clever grid technology.
Read or Download Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications PDF
Similar semiconductors books
The World's number 1 advisor to revealed Circuit Boards_Now thoroughly up to date with the newest info on Lead-Free production! the simplest reference within the box for over 30 years, the broadcast Circuits guide equips you with definitive assurance of each side of published circuit assemblies_from layout tips on how to fabrication techniques.
After approximately a decade of luck because of its thorough assurance, abundance of difficulties and examples, and functional use of simulation and layout, Power-Switching Converters enters its moment variation with new and up-to-date fabric, solely new layout case reviews, and increased figures, equations, and homework difficulties.
The bottled waters has turn into an essential and full of life quarter of the beverage international, in constructed and constructing international locations world wide. on the grounds that ebook of the 1st variation in 1998, the has gone through a impressive growth, and this has served to underline the necessity for an obtainable resource of technical tips.
- Design Exploration of Emerging Nano-scale Non-volatile Memory
- Organic Electronics
- Fundamentals of Optical Fiber Sensors
- ESD: Design and Synthesis
- Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors
- High Dielectric Constant Materials: VLSI MOSFET Applications (Springer Series in Advanced Microelectronics)
Additional info for Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Jpn. J. Appl. , 45, 7565.  Friedrichs, P. (2008) Silicon carbide power-device products–Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications. Phys. Status Solidi B, 245, 1232. , Kawamoto, N. et al. (2009) Development of SiC diodes, power MOSFETs and intelligent power modules. Phys. Status Solidi A, 206, 2403.  Kimoto, T. (2010) Technical Digest 2010 VLSI Technology Symposium, Honolulu, Hawaii, 2010, p. 9 SiC technologies for future energy electronics.
A crystal plane (h1 h2 h3 lh ) is equivalent to a plane (h k l), defined by three Miller indices in a monoclinic system, when the following relations are satisfied: h1 = h, h2 = k, h3 = –(h + k), and lh = l. 5) In a similar manner, a crystalline direction [u1 u2 u3 ????h ] is equivalent to a direction [u ???? ????], defined by three Miller indices in a monoclinic system, when the following relations are satisfied: u1 = (2u–????)∕3, u2 = (2????–u)∕3, u3 = –(u + ????)∕3, ????h = ????. 8). In this sense, Si atoms can be referred to as cations and C atoms as anions.
18 shows (a) the low-field electron mobility versus donor density and (b) the hole mobility versus acceptor density for 4H-SiC at different temperatures [69–72]. At high temperature, the doping dependence of mobility becomes small, because the influence of impurity scattering decreases. 17 (a) Low-field electron mobility versus donor density and (b) hole mobility versus acceptor density for 4H-SiC and 6H-SiC at room temperature. 18 (a) Low-field electron mobility versus donor density and (b) hole mobility versus acceptor density for 4H-SiC at different temperatures ([69–72] reproduced with permission from AIP Publishing LLC).