By Karen A. Reinhardt
This complete quantity presents an in-depth dialogue of the basics of cleansing and floor conditioning of semiconductor functions reminiscent of high-k/metal gate cleansing, copper/low-k cleansing, excessive dose implant stripping, and silicon and SiGe passivation. the idea and primary physics linked to rainy etching and rainy cleansing is reviewed, plus the skin and colloidal points of rainy processing. formula improvement practices and method are offered in addition to the purposes for combating copper corrosion, cleansing aluminum traces, and different delicate layers. this can be a must-have reference for any engineer or supervisor linked to utilizing or delivering cleansing and illness unfastened applied sciences for semiconductor production.
From the Reviews...
"This guide might be a worthy source for lots of educational libraries. Many engineering librarians who paintings with quite a few courses (including, yet no longer restricted to fabrics Engineering) should still comprise this paintings of their assortment. My suggestion is so as to add this paintings to any assortment that serves a campus with a materials/manufacturing/electrical/computer engineering courses and campuses with departments of physics and/or chemistry with huge graduate-level enrollment."
—Randy Wallace, division Head, Discovery Park Library, college of North TexasContent:
Chapter 1 floor and Colloidal Chemical elements of rainy cleansing (pages 1–36): Srini Raghavan, Manish Keswani and Nandini Venkataraman
Chapter 2 The Chemistry of rainy cleansing (pages 39–94): D. Martin Knotter
Chapter three The Chemistry of rainy Etching (pages 95–141): D. Martin Knotter
Chapter four floor Phenomena: Rinsing and Drying (pages 143–168): Karen A. Reinhardt, Richard F. Reidy and John A. Marsella
Chapter five primary layout of Chemical Formulations (pages 169–192): Robert J. Rovito, Michael B. Korzenski, Ping Jiang and Karen A. Reinhardt
Chapter 6 Filtering, Recirculating, Reuse, and Recycling of chemical compounds (pages 193–236): Barry Gotlinsky, Kevin T. Pate and Donald C. Grant
Chapter 7 cleansing demanding situations of High??/Metal Gate buildings (pages 237–284): Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt
Chapter eight excessive Dose Implant Stripping (pages 285–325): Karen A. Reinhardt and Michael B. Korzenski
Chapter nine Aluminum Interconnect cleansing and Drying (pages 327–354): David J. Maloney
Chapter 10 Low??/Cu cleansing and Drying (pages 355–394): Karen A. Reinhardt, Richard F. Reidy and Jerome Daviot
Chapter eleven Corrosion and Passivation of Copper (pages 395–428): Darryl W. Peters
Chapter 12 Germanium floor Conditioning and Passivation (pages 429–472): Sonja Sioncke, Yves J. Chabal and Martin M. Frank
Chapter thirteen Wafer Reclaim (pages 473–500): Michael B. Korzenski and Ping Jiang
Chapter 14 Direct Wafer Bonding floor Conditioning (pages 501–541): Hubert Moriceau, Yannick C. Le Tiec, Frank Fournel, Ludovic F. L. Ecarnot, Sebastien L. E. Kerdiles, Daniel Delprat and Christophe Maleville
Chapter 15 Novel Analytical tools for cleansing review (pages 543–564): Chris M. Sparks and Alain C. Diebold
Chapter sixteen Stripping and cleansing for complicated Photolithography purposes (pages 565–583): John A. Marsella, Dana L. Durham and Leslie D. Molnar
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Extra info for Handbook of Cleaning in Semiconductor Manufacturing: Fundamental and Applications
Additionally, particles, those which are organic in nature, are removed in this step. The second step is the removal of metal ions because, in some cases, they can affect the homogeneity of the surface etching process required to remove the particle. Therefore, the particle removal step is the final step of an ideal cleaning process. 1 RCA Cleaning Kern, while working for RCA, developed a method to clean Si wafers and first published the process in 1970 . This cleaning sequence was, and still is, accepted worldwide as the standard clean for silicon wafers.
B. C , Fundamentals of Fourier Transform Infrared Spectroscopy, 2nd Edition, CRC Press, New York (2010). 70. , Mills, B. , Paquette, G. , /. Assoc. Off. Anal. , 69(6):924-8 (1986). 71. , Euro. J. Inorg. , 2002(12):3298 (2002). 72. Washburn, E. , Phys. , 17(3):273 (1921). 73. Rideal, E. , Phil. , 44(264):1152 (1922). 74. , /. Electrochem. Soc, 144(12):4331 (1997). 75. , ECS Transactions, 11(2), pp. 299-306 (2007) 76. , Microelectronic Engineering, 86(2):132 (2009). 77. , IEEE Interconnect Technology Conference Proceedings, p.
These steps involve a wetchemical oxidation of the surface by H 2 0 2 in an alkaline and acidic environment, respectively. RCA cleaned wafers are always hydrophilic and contain a layer of chemical oxide. A chemical oxide is a silicon oxide formed by the oxidation of silicon via a wet-chemical reaction. 4. The original RCA sequence does not start with a clean that specifically removes organic contamination; however, it does remove some organics but only those with particle behavior. It also does not specifically include an HF step to remove native or chemical oxide.