Download High Frequency Continuous Time Filters in Digital CMOS by Shanthi Pavan PDF

By Shanthi Pavan

There's an ever expanding pattern in the direction of placing complete platforms on a unmarried chip. which means analog circuits must coexist at the similar substrate besides significant electronic platforms. on account that applied sciences are optimized with those electronic platforms in brain, designers must make do with typical CMOS tactics within the future years. We tackle analog filter out layout from this angle. Filters shape very important blocks in purposes starting from machine disc-drive chips to radio transceivers. during this booklet, we increase the speculation and methods useful for the implementation of excessive frequency (hundreds of megahertz) programmable non-stop time filters in usual CMOS tactics. seeing that excessive density poly-poly capacitors will not be to be had in those applied sciences, replacement capacitor buildings need to be came upon. Met- steel capacitors have low particular capacitance. an alternate is to take advantage of the (inherently nonlinear) capacitance shaped through MOSFET gates. In bankruptcy 2, we specialize in using MOS capacitors as integrating components. A physics-based version which predicts distortion effectively is gifted for a two-terminal MOS constitution in accumulation. Distortion in those capacitors as a functionality of sign swing and bias voltage is computed. bankruptcy three experiences continuous-time clear out architectures within the gentle of bias-dependent integrating capacitors. We additionally speak about the benefits and demerits of varied CMOS transconductance parts. the issues encountered in designing excessive frequency programmable filters are mentioned intimately.

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31) The two approaches would yield identical results if ψ s was known exactly. 25) for ψ s is approximate. 30). 31) has no such problem. Hence, this expression should be used to calculate capacitor charge. The performance of the implemented model was compared with a very finely spaced piecewise linear capacitor model. This model was generated from device simulation. The voltage step used in the piecewise linear model was 1mV. Distortion is used as a metric for comparison, as this depends on derivatives of the C–V characteristic, and is hence a very sensitive indicator of modeling accuracy.

3(a), if a large positive voltage is applied to the top plate, positive charges on the polysilicon attract negative charges in the bulk to the oxide-semiconductor interface, leading to accumulation of electrons at the surface. The bottom plate contact is formed by the n+ diffusion. 3(b) can be used if the bottom plate is formed by holes. This corresponds to a negative gate-body voltage and an inverted semiconductor surface. 3(a) is suitable for accumulation mode of operation, while that in (b) is to be operated in inversion.

5. Comparison of numerical simulation and proposed models for different values of substrate doping concentration (– numerical, ⊕ proposed). 84 fF/µm2, VFB = 0, T=300 K. 6. Variation of capacitance with temperature(– numerical, ⊕ proposed). 84 fF/µm2, VFB = 0, ND = 1017 cm–3. MOS Capacitor Modeling 6. 15 MODEL IMPLEMENTATION In this section we examine issues that arise in implementing the model in a general purpose circuit simulator. In this work, the model was implemented in TISPICE, an in-house circuit simulation program at Texas Instruments.

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