By Friedrich Bachmann, Peter Loosen, Reinhart Poprawe
The publication describes the Physics and expertise of the layout and epitaxial construction of excessive strength Diode Lasers, the layout and features of optical structures for top strength Diode Laser structures together with beam shaping and the appliance of such platforms. The reader advantages from the documentation of the complete chain attaining from the new release of this precise kind of laser radiation as much as its program within the business construction atmosphere.
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Additional info for High Power Diode Lasers: Technology and Applications (Springer Series in Optical Sciences)
Ideally, the operating point of the laser bar should be close to the point of maximum efficiency. , by changing the resonator length or the reflection coefficient of the front facet. 0 0 0 25 50 Current [A] Wavelength [nm] 60 Votage [V] 60 Efficiency [%] Output power [W] 2. 21. Sample characteristic curves, measured using an 808-nm broad-area laser bar with 19 emitters, 150 μm emitter width, 500 μm pitch Critical for long-term operation of the laser bar is excessive thermal load. As a rule of thumb the operation temperature should not exceed 60◦ C, measured at the pn-junction.
Nevertheless, today both epitaxial growth techniques are well established. World records concerning efficiency, emitted power, device lifetime, and electro-optical characteristics have been achieved by using both techniques. Against this background, the decision in favor of the techniques is usually driven by secondary arguments like intellectual property and fabrication experience. To summarize, today’s high-power semiconductor lasers require: • precise control of doping levels, precise control of layer composition, • exact limitation of impurities in the layers, • the ability to grow thin layers (fractions of a monolayer) and also thick layers up to a few micrometers, • the ability to change composition and doping conditions during growth, • high crystalline quality, • good reproducibility and homogeneity.
28. 2 mm in Fig. 29. Information about laser power for this particular 25 emitter containing InGaAlAs-“cm-bar” completes our discussion. , the emitter at 9 mm. , several microns from the mirror), whereas the lasing is affected by device properties along the whole 2. High-Power Diode Laser Technology and Characteristics 45 cavity length. 5 A) an almost uniform thermal distribution can be presumed, whereas for the case of lasing (I = 20 A), this is definitely not guaranteed any longer. Furthermore, power redistributions between the emitters represent an important issue.