Download Hydrogen in Crystalline Semiconductors by Stephen J. Pearton Ph. D., James W. Corbett Ph. D., PDF

By Stephen J. Pearton Ph. D., James W. Corbett Ph. D., Professor Michael Stavola Ph. D. (auth.)

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39]. 40-41]. There are known to be at least eight different thermal donor species formed at 450 C annealing, presumably as a result of additional oxygen agglomeration. 42-43]. It has been demonstrated by a number of researchers that both the 450 C thermal donors and the new donors are passivated by association with atomic hydrogen. 8 shows capacitance and current DLTS spectra from N-type, CZ-grown Si annealed at 450 C for 18 hours to form the thermal donors. 10 15 cm- 3 ). This enabled standard capacitance or current DLTS analysis.

60]. By contrast, in the shallower near-surface region the apparent diffusivity is approximately a factor of twenty less, and the passivated boron requires annealing temperatures above 140 C to become reactivated. These observations may be related to the presence of two configurations of boron-hydrogen complexes in the Si. The more stable configuration we assume is one in which the hydrogen is located at a near Bond-Centered (BC) position between the boron and a neighboring Si atom. The other configuration is one in which in which the hydrogen is at an Anti-Bonding (AB) site along the (111) direction.

The donor-Si-H configuration was almost 1 eV lower in energy than the H-donor-Si complex. 81]. This would be expected for hydrogen occupying an AB site in the former case and a crowded Be site in the latter case. Amore Bonapasta et al. 82] also found that the AB-Si site was the most stable for hydrogen passivating a donor. Denteneer et al. 83] reported that hydrogen can reside slightly off the bond axis, which is consistent with the IR data of Stavola et al. 84]. 85] postulated that in n-type Si the formulation of a metastable diatomic complex labelled H; with hydrogen atoms occupying Be and Td sites along the [111] axis is relatively stable.

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