By Donald W. Murphy, Leonard V. Interrante
The volumes during this carrying on with sequence supply a compilation of present thoughts and concepts in inorganic man made chemistry. contains inorganic polymer syntheses and instruction of vital inorganic solids, syntheses utilized in the improvement of pharmacologically energetic inorganic compounds, small-molecule coordination complexes, and comparable compounds. additionally includes invaluable details on transition organometallic compounds together with species with metal-metal cluster molecules. All syntheses provided right here were verified.
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Additional info for Inorganic Synthesis, Vol. 30
3-'5 Thus, quenching of TiS, in the presence of liquid sulfur from temperatures above this range effectively avoids TiS, formation. ' 5 - However, the disulfides resulting from these methods have not been as throughly characterized and have the disadvantage of significant impurity incorporation, such as halogen and oxygen containing impurities. The following procedure describes the synthesis of the most stoichiometric and thoroughly characterized TiS, prepared to date by direct reaction of the '' * Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704.
F. Murray, Mat. Res. , 7 , 519 (1972). 2. L. F. Durding and J. D. Corbett, J . Am. Chem. , 83, 2462 (1961). 3. D. Brown, Halides of the Lanthanides and Aetinides, Wiley-Interscience, New York, 1968, p. 219. 4. J. D. Corbett, L. F. Druding, W. J. Burkhard, and C. B. Lindahl, Discuss. Farad. , 32, 79 (1962). 5. J. D. Corbett, Inorg. Nucl. Chem. , 8, 337 (1972). 6. J. D. Corbett, R. A. Sallach, and D. A. Lokken, Adu. Chem. , 71, 56 (1967). Inorganic Syntheses, Volume30 Edited by Donald W. Murphy, Leonard V.
Several aspects of the synthetic procedure used to prepare TiSz for these purposes need to be considered. The formation of essentially stoichiometric TiS, is of particular importance, as any excess Ti residing in the van der Waals (vdW) gap appears to "pin" the host layers. 2. ', Care must also be taken to avoid TiS, formation, which can occur at the elevated sulfur pressures necessary to minimize the presence of excess Ti. '3-'5 Thus, quenching of TiS, in the presence of liquid sulfur from temperatures above this range effectively avoids TiS, formation.