Download Ion Implantation in Semiconductors and Other Materials by W. Frank (auth.), Billy L. Crowder (eds.) PDF

By W. Frank (auth.), Billy L. Crowder (eds.)

During the years because the first convention during this sequence used to be held at Thousand Oaks, California, in 1970, ion implantation has been an increasing and intriguing examine region. The advances during this box have been so speedy moment convention convened at Garmisch­ Partenkirchen, Germany, in 1971. today, our lower than­ status of the ion implantation method in semiconductors comparable to Si and Ge has reached a degree of adulthood and ion implantation thoughts are firmly confirmed in semiconductor gadget know-how. The advances in compound semiconductors haven't been as speedy. There has additionally been a shift in emphasis in ion implanta­ tion learn from semiconductors to different fabrics equivalent to metals and insulators. It used to be acceptable to extend the scope of the convention and the IIIrd overseas convention on Ion Implanta­ tion in Semiconductors and different fabrics was once held at Yorktown Heights, long island, December eleven to fourteen, 1972. an important variety of the papers offered at this convention handled ion implanta­ tion in metals, insulators, and compound semiconductors. The foreign Committee chargeable for organizing this convention consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and that i. Ruge. The convention attracted a hundred and eighty contributors from twelve international locations. The good fortune of the convention was once due in huge degree to the monetary aid of our sponsors, Air strength Cambridge examine Laboratories and the workplace of Naval Research.

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A. Borders, App1. Phys. Letters 16, 108 (1970). [11] D. ~ Brice, App1. Phys. Letters 16, 103 (1970). [12] H. J. Stein, F. L. Vook, and J. A~Borders, App1. Phys. Letters 16, 106 (1970). [13] T. Tokuyama, Record of the 10th Symposium on Electron, Ion and Laser Beam Techno1ogy,183. [14] F. F. Morehead, Jr. and B. L. Crowder, Proc. I Int. Conf. on Ion Implantation in Semiconductors 25 (1970). [15] J. A. Davies, J. Denhartog, L. Eriksson, and J. W. Mayer, Can. J. Phys. 45, 4053 (1967). [16] K. H~Ek1und and A.

E. Garmire, H. Stoll, A. Yariv, and R. G. Hunsperger, Appl. Phys. Lett. 21, 87 (1972). 2. K. V. Vaidyanathan, L. A. K. Watt, Radiation Effects in Semiconductors, edited by J. W. Corbett and G. D. Watkins (Gordon and Breach Sci. Publishers, 1971), p. 293; K. V. Vaidyanathan, L. A. K. Watt, and M. L. Swanson, Phys. Stat. (a) 10, 127 (1972) • 3. v. C. Burkig, J. L. McNichols, and W. S. Ginell, Proc. IEEE Annual Conf. , July 1970 summary only ; private communication. 4. U. Piesberger, Semiconductors and Semimetals, edited by R.

In their treatment they suppose that the metallic-like regions are due to phase transitions in the collision cascade regions, following the suggestions of Gonser and Okkerse [llJ who interpreted the results of their experiments on deuteron-bombarded GaSb in this manner. The combination of high temperatures in the high displacement density region and high pressures exerted by the surrounding matrix could bring about a transition to the metallic conducting state (",240 kbar in GaAs [12J). The metallic inclusion theory and the predicted optical attenuation, however, are not dependent on a specific mechanism for the formation of the particles.

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