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Extra info for Minority Carriers In III-V Semiconductors: Physics and Applications
The optical gain and radiative recombination rate in a QW structure has been calculated using a single level approximation and assuming no broadening of each level as described in the previous section. In order to explain the saturation of gain at high currents, one needs to take into account the broadening of each level due to intraband relaxation. The calculated modal gain, as a function of current density, is shown in Fig. 20. N denotes the number of wells in the MQW structure. The calculation takes into account level broadening.
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