By N. G. Basov (auth.), N. G. Basov (eds.)
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Extra info for Optical Properties of Semiconductors
10-4 W. 3 x 10-2 V/W. The time constant was 3 min. 2. 8 V/W. It consisted of two sensitive components (for the compensation of the background radiation during measurements) and they had sensitive areas of 1 x 1 mm. These components were enclosed in a glass cell with a BaF2 window. The emf was measured with an M195/1 microammeter. 3. The polarization of the radiation was measured with an IPP-12 infrared polarizer, composed of eight AgCI plates. The degree of polarization achieved in this way was 95% and the transmission was 35-40%.
These changes depended on the temperature. 19. Current- voltage characteristics ofInAs diodes at 77°K. The diode numbers are given alongside each curve. I. 1. ZASA VI TSKII c7, 31 reI. units II Fig. 20. Dependences of the intensity (a) and width (b) of a spontaneous line emitted by an InAs diode on the transverse magnetic field applied at liquid helium temperatures. If If /I, kOe magnetic field (I" H) caused no changes in the spectra of the spontaneous or coherent radiation at all the investigated temperatures (this was true within the limits of the resolving power of the apparatus).
RK--;rK~'- III Fig. 21. 2 and 77°K. J§2 (J 32 1. I. 22. Dependences of the center of gravity of the mode energy (a) and of the radiation intensity (b) on the transverse magnetic field applied to an InAs laser in the case when carriers are deflected by the field to the surface being examined. Diode No. 5 X 103 A/cm2 , T = 1 fJ,sec. (Fig. 21b). In this case the current pulses were made sufficiently short (~ 1 fJ,sec) in order to minimize the long-wavelength shift due to the heating of the diode.