By Janusz Bogdanowicz
One of the severe concerns in semiconductor know-how is the proper electric characterization of ultra-shallow junctions. one of the plethora of dimension recommendations, the optical reflectance process built during this paintings is the only idea that doesn't require actual touch, making it compatible for non-invasive in-line metrology. This paintings develops generally all of the primary actual types of the photomodulated optical reflectance strategy and introduces novel ways that reach its applicability from dose tracking in the direction of designated service profile reconstruction. It represents an important leap forward in junction metrology with power for business implementation.
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Extra resources for Photomodulated Optical Reflectance: A Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon
Clarysse, A. Moussa, B. Parmentier, J. Bogdanowicz, W. Vandervorst, H. Bender, M. Pfeffer, M. F. Nielsen, S. Thorsteinsson, R. Lin, D. Petersen, Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures. J. Vac. Sci. Technol. B 28(1), C1C8–C1C14 (2010) 28. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (Wiley, Chichester, 2007) 29. M. A. Rosenthal, A. Maznev, A. Kasic, P. Y. Guittet, Measuring deeptrench structures with model-based ir. Solid State Technol.
L. Nicolaides, A. Salnick, J. Opsal, Study of low energy implants for ultrashallow junctions using thermal wave and optical techniques. Rev. Sci. Instrum. 74(1), 563–565 (2003) 40. L. Nicolaides, A. Salnick, J. Opsal, Nondestructive analysis of ultrashallow junctions using thermal wave technology. Rev. Sci. Instrm. 74(1), 586–588 (2003) 41. A. Salnick, J. Opsal, Quantitative photothermal characterization of ion-implanted layers in si. J. Appl. Phys. 91(5), 2874–2882 (2002) References 19 42. G. Smets, E.
1). The boundary conditions of Maxwell’s wave equations indeed show that only a proportion t˜ of the electromagnetic wave is transmitted through the interface. e. a proportion r˜ = t˜ − 1, bounces back or is reflected in opposite direction . In other words, for an incident electric field E˜ i , the transmitted electric field is E˜ t = t˜E˜ i and the reflected electric field is E˜ r = r˜ E˜ i , where t˜ and r˜ are respectively called the transmission and reflection coefficients. e. n˜ 1 − n˜ 2 .