By T. D. Mantei (auth.), P. F. Williams (eds.)
Plasma Processing of Semiconductors comprises 28 contributions from 18 specialists and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, much less traditional processing functions of plasmas, and business purposes.
Audience: insurance levels from introductory to cutting-edge, therefore the e-book is acceptable for graduate-level scholars looking an advent to the sector in addition to tested employees wishing to expand or replace their knowledge.
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Extra resources for Plasma Processing of Semiconductors
G. 1 incident particle removes 1 substrate atom). not a viable mechanism because there aren't enough ions to attain practical etching rates. But at high ion densities "hungry ions" really can devour a substrate. This is illustrated in Figure 4 which shows the maximum reactive ion etch rate for silicon as a function of ion current. l/min if each impinging ion removed one substrate atom (unit efficiency). "Unit efficiency" is, of course, an overly optimistic scenario. 7, depending on ion energy).
The voltage required for this mechanism is much higher than that for the diffusion-controlled glow, so that the observed increase in potential is as expected. Electron Energy Oscillation When electrons collide with neutrals, kinetic energy is lost. Electron energy distribution functions (EEDF's) commonly have mean values far above the translational gas temperature (E')UCJ=3kT/2) because electrons transfer a small fraction of their total energy in most collisions, while gas molecules efficiently conduct translational energy to their surroundings.
Where ion bombardment is intense (below the -3-5MHz ion transit Directional Step Coverage frequency), film deposition can be anisotropic (film growth is predominantly vertical) and more chemically stable films are the rule. .. ... · ·.. These differences can be explained ....... .. ··· ... ... :..... in terms of two competing growth =-:-= " ... =- ',,', '. mechanisms. The first, nonGap Filling "Sputter/Dep" directional free-radical growth occurs when monomeric products Figure 5. Deposition Mechanisms of a TEOS plasma impinge on the growing film surface.