Download Power electronics semiconductor devices by Robert F. Pierret PDF

By Robert F. Pierret

"This ebook relates the hot advancements in numerous key electric engineering R & D labs, targeting energy electronics switches and their use. the 1st sections take care of key energy electronics applied sciences, MOSFETs and IGBTs, together with sequence and parallel institutions. the subsequent part examines silicon carbide and its potentiality for strength electronics functions and its current barriers. Then, a Read more...

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We can see that between 25°C and 125°C, RDSon doubles while Vth reduces by 25%. For the transfer characteristic, two parameters are in opposition when temperature increases: decreases Vth, contrasting the rise of dID/dTj. For the same VGS, reduction of the transconductance parameter Kp has the opposite effect. Thus, dID/dTjh includes two reverse behaviors in temperature, versus ID current. 34. 500 V, 7 A, 8 ȍ MOSFET characteristics versus temperature Switching characteristics show very few variations versus temperature, because Vth has a minimal reaction, and the power MOSFET capacitances are insensitive to 46 Power Electronics Semiconductor Devices temperature.

Coxp N . + (a) . P . Cds N . Coxm Coxd Coxp Cgdj . 25. (a) Various internal capacities and (b) equivalent circuit Power MOSFET Transistors 31 The drift zone is divided into two regions: the space charge region, and the ohmic region. The non-linear capacities highlight the space charge variation: Cgdj for the access deserted area Lacc, and Cdsj for the P+N- Lds deserted area. The non-linear capacities are described by the following equations: C gdj qH si N D 1 Lacc 2 2VZD ( acc) and C dsj qH si N D 1 Lds 2 2VZD ( ds ) where VZD(acc) and VZD(ds) are the space charge voltages in the Lacc and Lds parts of drift region N-.

Cds N . Coxm Coxd Coxp Cgdj . 25. (a) Various internal capacities and (b) equivalent circuit Power MOSFET Transistors 31 The drift zone is divided into two regions: the space charge region, and the ohmic region. The non-linear capacities highlight the space charge variation: Cgdj for the access deserted area Lacc, and Cdsj for the P+N- Lds deserted area. The non-linear capacities are described by the following equations: C gdj qH si N D 1 Lacc 2 2VZD ( acc) and C dsj qH si N D 1 Lds 2 2VZD ( ds ) where VZD(acc) and VZD(ds) are the space charge voltages in the Lacc and Lds parts of drift region N-.

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