Download Radiation Defect Engineering (Selected Topics in Electronics by Vitali V Kozlovski, Abrosimova Vera PDF

By Vitali V Kozlovski, Abrosimova Vera

The expanding complexity of difficulties in semiconductor electronics and optoelectronics has uncovered the inadequate capability of the technological doping tactics at the moment used. probably the most promising options, which this e-book explores, is radiation doping: the intentional, directional amendment of the houses of semiconductors below the motion of varied sorts of radiation. The authors reflect on the fundamental ideas of proton interactions with unmarried crystal semiconductors at the foundation of either idea in addition to sensible effects. every kind of proton transformations of the fabrics recognized almost immediately are analyzed intimately and interesting new fields of analysis during this path are mentioned.

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1982), Kozlovski, V. V. and Lomasov, V. N. (1984)l); previously only weak minima were found in such profiles. The condition required for the formation of a maximum at the depth equal to Rp is the use of sufficiently large beam current densities and relatively low doping levels (C=1017~ m - ~Of ) . special importance is the change in the sign of the extreme revealed in the impurity profiles, obtained under the same irradiation conditions at higher doping levels (C=1019~ m - ~These ). results could not be explained satisfactorily in terms of the existing models of PED.

And Damask, A. C. (1958)] devoted to PED, influence of the radiation defect annealing mechanism on PED of the impurities was considered for the case of uniform defect generation through the crystal volume. Particularly, dependence of &ED on @ and on density of the bombarding ion current J by the linear and not-linear RD annealing mechanism was estimated. 3. In comparison with the neutrons, qualitatively different picture is observed by using for PED light ions, particularly protons. Proton irradiation of the crystals permits to increase locally (along the depth and the area of the sample) vacancy concentration.

G. (1987), Kireev, P. S. (1975)] and it will influence the value of the screening radius. On the basis of the theoretical analysis carried out here, it is possible to evaluate contribution of each of four mechanisms of the proton-enhanced diffusion and interpret adequately known experimental data from [Baruch, P. (1977), Kozlovski, V. , Lomasov, V. , Gur’yanov, G. M. and Kovarskii, A. P. (1982), Kozlovski, V. , Lomasov, V. N. and Vlasenko, L. S. (1988), Philibert, J. (1991), Kachurin, G. , Gadiyak, G.

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