By Oleg G. Okhotnikov
This well timed booklet provides a overview of the latest advancements within the box of Semiconductor Disk Lasers. masking a variety of key issues, similar to working ideas, thermal administration, nonlinear frequency conversion, semiconductor fabrics, brief pulse new release, electric pumping, and laser purposes, the publication offers readers with a accomplished account of the basics and newest advances during this wealthy and various box. In so doing, it brings jointly contributions from global specialists at significant collaborative learn facilities in Europe and the us. each one bankruptcy encompasses a instructional type advent to the chosen subject appropriate for postgraduate scholars and scientists with a uncomplicated heritage in optics - making it of curiosity to a variety of scientists, researchers, engineers and physicists operating and drawn to this swiftly constructing box. it's going to additionally function extra interpreting for college kids within the box.
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Extra info for Semiconductor Disk Lasers: Physics and Technology
Efﬁcient nonlinear optical conversion requires high optical intensity; this is provided by high optical power and good beam quality, which allows focusing laser beam to small diameters. High optical power and good beam quality are precisely the fundamental properties of VECSEL lasers, which make them very efﬁcient sources for nonlinear optical conversion. The efﬁciency of nonlinear optical conversion increases with the increase in optical intensity. Even though the fundamental output power of VECSELs is high, their intracavity power is still much higher.
For smaller number of wells, threshold power rises very rapidly, whereas for larger number of wells, the threshold increases only slowly. 4 Calculated characteristics of the OPS-VECSEL lasers. (a) Threshold pump power versus the number of quantum wells. (b) Maximum output power versus the number of quantum wells. (c) Output power versus input power. 4b shows the calculated output laser power as a function of the number of quantum wells in the structure for several different external mirror reﬂectivities; the calculation assumes pump power of 1800 mW.
C) Three-mirror V-shaped cavity for w22 ¼ 4llaser Rc pﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃ Lc =ðRc ÀLc Þ: p passive mode locking. (d) Four-mirror Z-shaped cavity. (e) VECSEL cavity with two gain chips. (f) VECSEL cavity with three gain chips. 7a and b illustrate variation of the laser mode diameters on the two cavity end mirrors as a function of the cavity length. 7 Mode spot 1/e2 diameters of the planar–spherical cavity (a) on the semiconductor chip w1 and (b) on the output spherical mirror w2 for spherical mirror radii of curvature of Rc ¼ 25 and 50 mm and llaser ¼ 980 nm.