Download Semiconductor Memories: Technology, Testing, and Reliability by Ashok K. Sharma PDF

By Ashok K. Sharma

Semiconductor stories offers in-depth assurance within the components of layout for checking out, fault tolerance, failure modes and mechanisms, and screening and qualification tools including.* reminiscence phone constructions and fabrication technologies.* Application-specific thoughts and architectures.* reminiscence layout, fault modeling and attempt algorithms, barriers, and trade-offs.* house setting, radiation hardening procedure and layout concepts, and radiation testing.* reminiscence stacks and multichip modules for gigabyte garage.

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The read and write operation is controlled by switching the current in the conducting transistor from the row line to the appropriate data line. The basic operation of an ECL cell is explained with Figure 2-9. Assume that a logic '~I" is stored with Q} on. The row selection requires that both Rand R* go to the positive levels as shown. To write a "I," the column line C must be held low, which forward-biases the emitter of Q l' regardless of the previous state of the cell. As a result, the collector-emitter voltage of QI drops quickly, removing the base drive from Q2' When the row voltage returns to the standby levels, Q I remains "on," with its base current coming from R2.

In the ISSC Conferences during the last few years, several advanced 16 Mb CMOS SRAM designs and architectural developments have been presented. In 1992, Fujitsu presented development plans on a 16 Mb CMOS SRAM, organized as 4M words X 4 b [23]. Low power dissipation and access time of 15 ns are obtained by a reduced voltage amplitude data bus connected to a latched cascaded sense amplifier and a current sense amplifier. Double-gate pMOS thin-film-transistor (TFf) load-cell technology reduces the standby current.

2 • 39 Static Random Access Memories (SRAMs) Ao Vee ROW DECODER • x 512 MEMORY ARRAY GND ....... -CIRCUIT ~_ ____' Figure 2-25. Functional block diagram of IDT71256 (32K X 8 b). ) identifies the address location of the data. The applications using CAMs include database management, disk caching, pattern and image recognition, and artificial intelligence. - - -..... tt-- Die w G E I/O MTCH ·FULL PRIORITY ENCODER 256 LINES --8 BITS •• CONTROL: SEGMENT ,• COUNTER • • 16·81T1/0 BUS Figure 2-26. A block diagram of Advanced MicroDevices AM99CIOA CMOS CAM.

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