By Michael Shur
This moment of 2 volumes stories 4 very important extra parts: the expansion of SiC substrates; the deep defects in numerous SiC polytypes, which after a long time of analysis nonetheless outline the homes of bulk SiC and the functionality and reliability of SiC units; fresh paintings on SiC JFETs; and the complicated and arguable concerns very important for bipolar units.
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Additional info for SiC materials and devices. / Volume 2
Burgemeister, W. von Muench, and E. Pettenpaul, “Thermal conductivity and electrical properties of 6H silicon carbide”. J. Appl. , 50, p. 5790, 1979. 42 I. G. Ivanov , C. Hallin, A. Kordina and E. Janzen: J. Appl. Phys. 80 (1996) 3504. 43 Measurement courtesy of Jim Choyke, University of Pittsburgh, PA. McD. C. Glass, G. H. Hopkins, J. Jenny, M. C. Mitchell, M. Roth, Appl. Phys. Lett. 66 (1995) 1364. 45 E. Morvan, 0. Norblanc, C. Dua, and C. Brylinski, Mat. Sci. Forum 353-6 (2001) 669. 46 J. R.
B 64 (2001) 245212. 55 Private communication with B. Shanabrook, W. Carlos, and E. Glaser. com. ch 60 J. W. Palmour, H. Kong, J. Edmond, “Method of preparing silicon carbide surfaces for crystal growth”. Patent # 4946547 1990. 61 L. Zhou, V. Audurier, P. Pirouz, and J. A. Powell, J. “Chemomechanical polishing of silicon carbide”. 144 P. 161 1997. com/. 63 JSumakaris, Matls. Sci. Forum, 483-485 (2005) pp155-158. P. Bergman, H. A. Skytt, Mat. Sci. Forum 353-356 299 (2001). 27 This page intentionally left blank International Journal of High Speed Electronics a n d Systems Vol.
Phys. Lett. 66 (1995) 1364. 45 E. Morvan, 0. Norblanc, C. Dua, and C. Brylinski, Mat. Sci. Forum 353-6 (2001) 669. 46 J. R. Jenny, St. G. Miiller, A. Powell, V. F. Tsvetkov, H. M. Hobgood, R. C. Glass, and C. H. Carter, Jr. , J. , 31 (2002) 366 Adrian, this is the TDR ref that talks about HPSI. Did you want a reference that discussed the technique? Ditto for the OAS, DLTS, and EPR references. 47 J. R. Jenny, D. P. Malta, M. R. Calus, St. G. Muller, A. R. Powell, V. F. Tsvetkov, H. McD. Hobgood, R.