By Shuji Nakamura
The advance of a blue semiconductor laser at the foundation of GaN by means of Shuji Nakamura opens a brand new box for the purposes of semiconductor lasers. The wavelengths could be tuned through controlling the composition. For the 1st time in a single substrate fabric, lasers with a variety of wavelenghts, starting from pink via yellow and eco-friendly to blue, should be shaped. This truth including their excessive potency make GaN dependent lasers very worthy for a large spectrum of purposes. Additionaly, the conclusion of a special and profitable suggestion of study and improvement is mentioned.
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Additional info for The Blue Laser Diode: GaN Based Light Emitters and Lasers
1. 1. 544 ... 2 gives a schematic depiction of the growth of a (1000) GaN film onto a (0001) sapphire substrate clearly indicating the large lattice mismatch. 2 shows lattice constant and thermal mismatches for growth of GaN onto sapphire (from ). Buffer layers are used to grow high quality GaN onto sapphire despite the large lattice mismatch and thermal mismatch, as discussed in detail in Chap. 4 of the present book. :! 186;' ,/ 6 [1210J - GaN [ 1010) Sapphirl' ,/ ,/ -0" ! :GaN Sapphire 0: Fig.
We call this system a two-flow MOCVD (TF-MOCVD). GaN films are grown at atmospheric pressure. Sapphire with (0001) orientation (C face) was used as a substrate. Triethylgallium (TMG) and ammonia (NH3) were used as Ga and N sources, respectively. First, the substrate was heated to 1050 °C in a stream of hydrogen. Then, the substrate temperature was lowered to 1000°C to grow the GaN film. 01/min, and 54/-Lmol/min, respectively. The flow rates of H2 and N2 as the subflow were kept at 10 and 101/min respectively.
It is assumed here for simplicity that the incident light is normal to the GaN film. 05 in this calculation, a value which is assumed to be very large here in order that the oscillation of the transmittance might disappear after a few periods. lm) Fig. 9. The results of the calculation of transmittance and reflectance The intensity of the transmitted light through the substrate and the GaN film is measured by means of an IR radiation thermometer in our GaN growth. The intensity of the IR radiation must decrease exponentially with the growth time if absorption causes this attenuation of the oscillation amplitude with increasing thickness.